Direct writing of channels for microfluidics in silica by MeV ion beam lithography
The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here,...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Book Series |
| Published: |
2018
|
| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=79960058706&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/49961 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Chiang Mai University |
| Summary: | The lithographic exposure characteristic of amorphous silica (SiO 2) was investigated for 6.8 MeV 16O3+ ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO 2 in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated. © (2011) Trans Tech Publications, Switzerland. |
|---|