Lithography exposure characteristics of poly(methyl methacrylate) (PMMA) for carbon, helium and hydrogen ions
Poly(methyl methacrylate) is a common polymer used as a lithographic resist for all forms of particle (photon, ion and electron) beam writing. Faithful lithographic reproduction requires that the exposure dose, Θ, lies in the windowΘ0≤Θ<Θ×0, whereΘ0and Θ×0represent the clearing and cross-linking...
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| Main Authors: | , , , , , |
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| Format: | Journal |
| Published: |
2018
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| Subjects: | |
| Online Access: | https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84655168022&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/51997 |
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| Institution: | Chiang Mai University |