Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

by Yeow, Y.T., Ling, C.H., Ah, L.K.
Published 2014

Characterization of charge trapping in submicrometer NMOSFET's by gate capacitance measurements

by Ling, C.H., Yeow, Y.T., Ah, L.K.
Published 2014

Observation of MOSFET degradation due to electrical stressing through gate-to-source and gate-to-drain capacitance measurement

by Yeow, Y.T., Ling, C.H., Ah, L.K.
Published 2014

Correspondence between gated-diode drain current and charge pumping current in hot-carrier stressed n- and p-MOSFET's

by Goh, Y.H., Ah, L.K., Ling, C.H.
Published 2014

Exploratory observations of effect of rapid thermal processing on silicon minority carrier lifetime using laser microwave photoconductance method

by Choi, W.K., Ah, L.K., Chan, Y.M., Raman, A.
Published 2014

Study of rf-sputtered yttrium oxide films on silicon by capacitance measurements

by Ling, C.H., Bhaskaran, J., Choi, W.K., Ah, L.K.
Published 2014

Logarithmic time dependence of pMOSFET degradation observed from gate capacitance

by Ling, C.H., Yeow, Y.T., Ah, L.K., Yung, W.H., Choi, W.K.
Published 2014

Logarithmic time dependence of pMOSFET degradation observed from gate capacitance

by Ling, C.H., Yeow, Y.T., Ah, L.K., Yung, W.H., Choi, W.K.
Published 2014

Hot-electron degradation in NMOSFET's: Results from temperature anneal

by Ling, C.H., Ah, L.K., Choi, W.K., Tan, S.E., Ang, D.S.
Published 2014

Recombination lifetime in silicon from laser microwave photoconductance decay measurement

by Ling, C.H., Teoh, H.K., Choi, W.K., Zhou, T.Q., Ah, L.K.
Published 2014

Recombination lifetime in silicon from laser microwave photoconductance decay measurement

by Ling, C.H., Teoh, H.K., Choi, W.K., Zhou, T.Q., Ah, L.K.
Published 2014

Effect of rapid thermal annealing on the structural and electrical properties of a silicon-silicon oxide system

by Choi, W.K., Chan, Y.M., Ah, L.K., Loh, F.C., Tan, K.L., Ramam, A.
Published 2014