A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing

بواسطة Ang, D.S.
منشور في 2014

A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

On the dominant interface trap generation process during hot-carrier stressing

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurement

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs

بواسطة Ang, D.S., Ling, C.H.
منشور في 2014

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

بواسطة Ang, D.S., Wang, S., Ling, C.H.
منشور في 2014

Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance

بواسطة Ling, C.H., Ang, D.S., Dutoit, M.
منشور في 2014

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

بواسطة Ang, D.S., Liao, H., Ling, C.H.
منشور في 2014

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment

بواسطة Liao, H., Ang, D.S., Ling, C.H.
منشور في 2014

Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling

بواسطة Ang, D.S., Lun, Z., Ling, C.H.
منشور في 2014

Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals

بواسطة Ang, D.S., Ling, C.H., Yeow, Y.T.
منشور في 2014

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

بواسطة Ang, D.S., Lun, Z., Ling, C.H.
منشور في 2014

Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's

بواسطة Ling, C.H., Ang, D.S., Tan, S.E.
منشور في 2014

Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors

بواسطة Ling, C.H., Ooi, J.A., Ang, D.S.
منشور في 2014