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Ang, D.S.
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Ang, D.S.
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Ang, D.S.
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1
A new insight into the degradation behavior of the LDD N-MOSFET during dynamic hot-carrier stressing
由
Ang
,
D
.S.
出版 2014
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2
A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET's
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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3
A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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4
On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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5
The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFET's
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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6
Effects of tungsten polycidation on the hot-carrier degradation in buried-channel LDD p-MOSFET's
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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7
A novel experimental technique for the lateral profiling of oxide and interface state charges in hot-hole degraded N-MOSFET's
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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8
On the dominant interface trap generation process during hot-carrier stressing
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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9
A New Model for the Post-Stress Interface Trap Generation in Hot-Carrier Stressed P-MOSFET's
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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10
A new assessment of the self-limiting hot-carrier degradation in LDD NMOSFET's by charge pumping measurement
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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11
A comparison of hot-carrier degradation in tungsten polycide gate and poly gate p-MOSFETs
由
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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12
Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET
由
Ang
,
D
.S.
,
Wang, S.
,
Ling, C.H.
出版 2014
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13
Extraction of channel length in 0.1 μm NMOSFET by gate to drain capacitance
由
Ling, C.H.
,
Ang
,
D
.S.
,
Dutoit, M.
出版 2014
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14
Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
由
Ang
,
D
.S.
,
Liao, H.
,
Ling, C.H.
出版 2014
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15
A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: Device characterization and damage assessment
由
Liao, H.
,
Ang
,
D
.S.
,
Ling, C.H.
出版 2014
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16
Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling
由
Ang
,
D
.S.
,
Lun, Z.
,
Ling, C.H.
出版 2014
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17
Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals
由
Ang
,
D
.S.
,
Ling, C.H.
,
Yeow, Y.T.
出版 2014
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18
Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region
由
Ang
,
D
.S.
,
Lun, Z.
,
Ling, C.H.
出版 2014
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19
Effects of measurement frequency and temperature anneal on differential gate capacitance spectra observed in hot carrier stressed MOSFET's
由
Ling, C.H.
,
Ang
,
D
.S.
,
Tan, S.E.
出版 2014
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20
Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors
由
Ling, C.H.
,
Ooi, J.A.
,
Ang
,
D
.S.
出版 2014
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