Quantitative analysis of quality management literature published in total quality management and business excellence (1996-2010)

by Lo, Q.-Q., Chai, K.-H.
Published 2014

Impacts of size and cross-sectional shape on surface lattice constant and electron effective mass of silicon nanowires

by Yao, D., Zhang, G., Lo, G.-Q., Li, B.
Published 2014

Optoelectronic monolithic integration of waveguided Metal-Germanium-Metal Photodetector and Ge CMOSFETs on SOI wafer

by Zang, H., Wang, J., Lo, G.Q., Lee, S.J.
Published 2014

Defining a critical period for inhibitory circuits within the somatosensory cortex

by Lo, S.Q, Sng, J.C.G, Augustine, G.J
Published 2020

Thermoelectric performance of silicon nanowires

by Zhang, G., Zhang, Q., Bui, C.-T., Lo, G.-Q., Li, B.
Published 2014

Neurodegenerative diseases: Exercising toward neurogenesis and neuroregeneration

by Ang, E.-T, Tai, Y.-K, Lo, S.-Q, Seet, R, Soong, T.-W
Published 2020

Silicon nanowire forthermoelectric applications: Effects of contact resistance

by Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
Published 2014

Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure

by Ye, J.D., Lo, G.Q., Gu, S.L., Teo, K.L.
Published 2014

Silicon nanowires thermoelectric devices

by Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
Published 2014

Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technology

by Li, Y., Buddharaju, K., Singh, N., Lo, G.Q., Lee, S.J.
Published 2014

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

by Ya Lim, P.S., Chi, D.Z., Lo, G.Q., Yeo, Y.C.
Published 2014

Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory

by Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L.
Published 2014

Silicon vertical-nano-wire based photovaltaic device

by Wang, J., Li, Z.H., Singh, N., Lo, G.Q., Lee, S.J.
Published 2014

CMOS compatible Ge/Si core/shell nanowire gate-all-around pMOSFET integrated with HfO2/TaN gate stack

by Peng, J.W., Singh, N., Lo, G.Q., Kwong, D.L., Lee, S.J.
Published 2014

Tensile-strained germanium CMOS integration on silicon

by Zang, H., Loh, W.Y., Ye, J.D., Lo, G.Q., Cho, B.J.
Published 2014

All-optical mapping of barrel cortex circuits based on simultaneous voltage-sensitive dye imaging and channelrhodopsin-mediated photostimulation

by Lo, S.Q, Koh, D.X.P, Sng, J.C.G, Augustine, G.J
Published 2020

Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture

by Wong, H.-S., Tan, L.-H., Chan, L., Lo, G.-Q., Samudra, G., Yeo, Y.-C.
Published 2014

Substrate effects on resonant frequency of silicon-based RF on-chip MIM capacitor

by Xiong, Y.-Z., Yu, M.-B., Lo, G.-Q., Li, M.-F., Kwong, D.-L.
Published 2014

Si-nanowire TAHOS TaN/AI2O3/HfO2/SiO 2/Si nonvolatile memory cell

by Fu, J., Singh, N., Yang, B., Zhu, C.X., Lo, G.Q., Kwong, D.L.
Published 2014

Polycrystalline Si nanowire SONOS nonvolatile memory cell fabricated on a gate-all-around (GAA) channel architecture

by Fu, J., Jiang, Y., Singh, N., Zhu, C.X., Lo, G.Q., Kwong, D.L.
Published 2014