Digital signal processing : enhancing speech signal

بواسطة Tran, Xuan Anh
منشور في 2014

Transition metal oxide based resistive RAM for high density non-vilatile memory

بواسطة Tran, Xuan Anh
منشور في 2013

Design of continuous-time delta-sigma modulator for sub-GHz sampling frequency

بواسطة Tran, Xuan Anh.
منشور في 2009

A self-rectifying and forming-free HfOx based-high performance unipolar RRAM

بواسطة Yu, Hongyu, Tran, Xuan Anh
منشور في 2013

A self-rectifying unipolar HfOx based RRAM using doped germanium bottom electrode

بواسطة Liu, W. J., Tran, Xuan Anh, Sun, Xiaowei, Yu, Hongyu
منشور في 2013

Transport properties of HfO2−x based resistive-switching memories

بواسطة Wang, Zhongrui, Yu, Hongyu, Tran, Xuan Anh, Fang, Zheng, Wang, Jinghao, Su, Haibin
منشور في 2013

Characteristics of a single-layer graphene field effect transistor with UV/ozone treatment

بواسطة Tran, Xuan Anh, Yu, Hongyu, Sun, Xiaowei, Liu, W. J., Liu, X. B., Wei, J.
منشور في 2013

A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture

بواسطة Liu, W. J., Yeo, Y. C., Nguyen, B. Y., Tran, Xuan Anh, Zhu, Wei, Yu, Hongyu
منشور في 2013

Mechanism of different switching directions in graphene oxide based RRAM

بواسطة Wang, Zhongrui, Tjoa, Verawati, Wu, L., Liu, W. J., Fang, Z., Tran, Xuan Anh, Wei, J., Zhu, W. G., Yu, Hongyu
منشور في 2013

A novel self-selection bipolar RRAM cell with ultra-low operation currents for cross-point application

بواسطة Gao, Bin, Kang, Jinfeng, Chen, Bing, Huang, Peng, Ma, Long, Zhang, Feifei, Liu, Lifeng, Liu, Xiaoyan, Tran, Xuan Anh, Yu, Hongyu
منشور في 2013

Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping

بواسطة Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu
منشور في 2013

Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection

بواسطة Wei, J., Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Yu, Hongyu
منشور في 2013

A self-rectifying HfOx-based unipolar RRAM with NiSi electrode

بواسطة Tran, Xuan Anh, Gao, Bin, Yu, Hongyu, Zhu, W. G., Kang, J. F., Liu, W. J., Fang, Z., Wang, Z. R., Yeo, Y. C., Nguyen, B. Y., Li, M. F.
منشور في 2013

Positive bias-induced Vth instability in graphene field effect transistors

بواسطة Liu, W. J., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., Sun, Xiaowei, Tran, Xuan Anh, Ng, Geok Ing, Yu, Hongyu
منشور في 2013