SIMULATION OF ELECTRICAL CHARACTERISTICS IN FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR WITH MASTER EQUATION METHOD
In this research, orthodox theory will be expounded to give an explanation over singleelectron tunnelling phenomenon in general. A simulation of SET devices will be conducted based on such model by utilizing Master Equation method as stochastic approach, that is determining the current density by...
Saved in:
Main Author: | Arief Fachruddin, Muchammad |
---|---|
Format: | Final Project |
Language: | Indonesia |
Online Access: | https://digilib.itb.ac.id/gdl/view/49442 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Institut Teknologi Bandung |
Language: | Indonesia |
Similar Items
-
SIMULATION OF ELECTRICAL CHARACTERISTICS IN FERROMAGNETIC SINGLE-ELECTRON TRANSISTOR WITH MASTER EQUATION METHOD
by: Arief Fachruddin, Muchammad -
Coherent and stochastic charge tunneling in ferromagnetic single electron transistors
by: Jalil, M.B.A., et al.
Published: (2014) -
Enhanced magneto-Coulomb effect in asymmetric ferromagnetic single electron transistors
by: Jalil, M.B.A., et al.
Published: (2014) -
Spin transfer and current-induced switching in a ferromagnetic single-electron transistor
by: Jalil, M.B.A., et al.
Published: (2014) -
The effects of cotunneling and spin flip on the spin polarized transport in a ferromagnetic single electron transistor
by: Ma, M.J., et al.
Published: (2014)