Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers

• Main Authors: Teo, Y. C., Chong, T. C., Li, M. F., Fan, Weijun
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Science::Physics::Atomic physics::Quantum theory
• Online Access: https://hdl.handle.net/10356/100792; http://hdl.handle.net/10220/17978
• Institution: Nanyang Technological University

The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN quantum wells (QWs) are studied using a numerical approach. We used the effective-mass parameters of GaN and InN derived using the empirical pseudopotential method. By varying the well width and mole...