Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift o...

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Bibliographic Details
Main Authors: Ma, B. S., Dang, Y. X., Fan, Weijun, Cheah, Weng Kwong, Yoon, Soon Fatt
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Online Access:https://hdl.handle.net/10356/100800
http://hdl.handle.net/10220/18119
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Institution: Nanyang Technological University
Language: English
Description
Summary:Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift of 40 meV mainly due to the group-III interdiffusion. As the annealing temperature increases to 825 °C, the blueshift decreases from 40 to 15 meV due to the nitrogen substitutional-interstitional kickout effect, Al/Ga interdiffusion at the AlAs/AlGaAs interface, and strain reduction. After annealing, the difference between the PLE peak energy and the detection energy decreases with increasing detection energy because of the redistribution of elemental concentrations.

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