Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector
Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift o...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/100800 http://hdl.handle.net/10220/18119 |
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| Institution: | Nanyang Technological University |
| Language: | English |