Annealing effects on the optical properties of a GaInNAs double barrier quantum well infrared photodetector

• Main Authors: Ma, B. S., Dang, Y. X., Fan, Weijun, Cheah, Weng Kwong, Yoon, Soon Fatt
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
• Online Access: https://hdl.handle.net/10356/100800; http://hdl.handle.net/10220/18119
• Institution: Nanyang Technological University

Annealing effects in a GaInNAs/AlAs/AlGaAs double barrier quantum well infrared photo detector were studied by x-ray diffraction, photoluminescence PL , and photoluminescence excitation PLE spectroscopy. After annealing at 650 °C, the GaInNAs PL peak shows stronger PL intensity and blueshift of 40 meV mainly due to the group-III interdiffusion. As the annealing temperature increases to 825 °C, the blueshift decreases from 40 to 15 meV due to the nitrogen substitutional-interstitional kickout effect, Al/Ga interdiffusion at the AlAs/AlGaAs interface, and strain reduction. After annealing, the difference between the PLE peak energy and the detection energy decreases with increasing detection energy because of the redistribution of elemental concentrations.