Solid source growth of Si oxide nanowires promoted by carbon nanotubes

Solid source growth of Si oxide nanowires promoted by carbon nanotubes

We report a method to promote solid source growth of Si oxide nanowires (SiONWs) by using an array of vertically aligned carbon nanotubes (CNTs). It starts with the fabrication of CNT array by plasma enhanced chemical vapor deposition (PECVD) on Si wafers, followed by growth of SiONWs. Herein, CNTs...

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書目詳細資料
Main Authors:	Lu, Congxiang, Liu, Wen-wen, Tan, Chong Wei, Tay, Beng Kang, Coquet, Philippe, Wang, Xingli, Li, Xiaocheng
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2014
主題:	DRNTU::Engineering::Electrical and electronic engineering::Applications of electronics
在線閱讀:	https://hdl.handle.net/10356/103625 http://hdl.handle.net/10220/24540
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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