Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM

By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradat...

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書目詳細資料
Main Authors:	Liu, Binghai, Dong, Zhi Li, Hua, Younan, Fu, Chao, Li, Xiaomin, Tan, Pik Kee, Zhao, Yuzhe
其他作者:	School of Materials Science & Engineering
格式:	Article
語言:	English
出版:	2019
主題:	DRNTU::Engineering::Materials Failure Analysis Semiconductors
在線閱讀:	https://hdl.handle.net/10356/105002 http://hdl.handle.net/10220/47400
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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