A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration

We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-Å-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25...

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Main Authors: Yew, K. S., Tang, L. J., Ang, Diing Shenp
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/105749
http://hdl.handle.net/10220/17726
http://dx.doi.org/10.1109/LED.2012.2231394
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-1057492019-12-06T21:57:10Z A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration Yew, K. S. Tang, L. J. Ang, Diing Shenp School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-Å-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25-Å HfO2 on ~3 Å SiOx, i.e., prepared from direct HfO2 deposition onto an HF-last Si surface. The method yields approximately two orders of magnitude reduction in gate current density and approximately an order of magnitude longer time to breakdown, as compared with the as-deposited gate stack. The observed improvements may be attributed to the “repair” of oxygen-vacancy defects at the HfO2/Si interface and in the HfO2 bulk by the absorbed ozone, through thermal activation provided by the RTA step. The findings provide a promising means for realizing low-leakage and reliable sub-1-nm EOT HfO2/TiN stacks for high-k last integration. 2013-11-15T07:29:07Z 2019-12-06T21:57:10Z 2013-11-15T07:29:07Z 2019-12-06T21:57:10Z 2013 2013 Journal Article Yew, K. S., Ang, D. S., & Tang, L. J. (2013). A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration. IEEE electron device letters, 34(2), 295-297. 0741-3106 https://hdl.handle.net/10356/105749 http://hdl.handle.net/10220/17726 http://dx.doi.org/10.1109/LED.2012.2231394 en IEEE electron device letters
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Yew, K. S.
Tang, L. J.
Ang, Diing Shenp
A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
description We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-Å-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25-Å HfO2 on ~3 Å SiOx, i.e., prepared from direct HfO2 deposition onto an HF-last Si surface. The method yields approximately two orders of magnitude reduction in gate current density and approximately an order of magnitude longer time to breakdown, as compared with the as-deposited gate stack. The observed improvements may be attributed to the “repair” of oxygen-vacancy defects at the HfO2/Si interface and in the HfO2 bulk by the absorbed ozone, through thermal activation provided by the RTA step. The findings provide a promising means for realizing low-leakage and reliable sub-1-nm EOT HfO2/TiN stacks for high-k last integration.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yew, K. S.
Tang, L. J.
Ang, Diing Shenp
format Article
author Yew, K. S.
Tang, L. J.
Ang, Diing Shenp
author_sort Yew, K. S.
title A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
title_short A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
title_full A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
title_fullStr A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
title_full_unstemmed A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
title_sort new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
publishDate 2013
url https://hdl.handle.net/10356/105749
http://hdl.handle.net/10220/17726
http://dx.doi.org/10.1109/LED.2012.2231394
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