A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration
We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-Å-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/105749 http://hdl.handle.net/10220/17726 http://dx.doi.org/10.1109/LED.2012.2231394 |
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| Institution: | Nanyang Technological University |
| Language: | English |