A new method for enhancing high- k /metal-gate stack performance and reliability for high- k last integration

• Main Authors: Yew, K. S., Tang, L. J., Ang, Diing Shenp
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/105749; http://hdl.handle.net/10220/17726; http://dx.doi.org/10.1109/LED.2012.2231394
• Institution: Nanyang Technological University

We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-Å-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25...