UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding

• Main Authors: Anantha, P., Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2015
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
• Online Access: https://hdl.handle.net/10356/107400; http://hdl.handle.net/10220/25472; http://dx.doi.org/10.1007/s00542-015-2432-8
• Institution: Nanyang Technological University

Direct bonding of InP dies to Si wafer at low temperature utilizing Al2O3 high-κ dielectric as the interfacial material for homogeneous bonding is reported. The bonding technique is assisted with a UV/Ozone exposure for surface activation and the activation time is optimized for the various intermed...