Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV)

• Main Authors: Lin, Ye, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; TSV; 3D Capacitors
• Online Access: https://hdl.handle.net/10356/144085
• Institution: Nanyang Technological University

In this paper, we investigated leakage current conduction mechanism in 3D capacitors embedded in TSVs. Two sets of test vehicles, 400 nm sputtered TiN/30 nm ALD Al2O3/400 nm sputtered TiN and 50 nm ALD TiN/10 nm ALD Al2O3/50 nm ALD TiN, have been characterized for their leakage current, respectively. FN tunneling and PF emission are identified for the first set, whereas Schottky emission, hopping conduction, PF emission and FN tunneling are identified for the second set. Rough sputtered bottom electrode is suspected to be responsible for leakage current degradation.