Leakage current conduction mechanism in 3D capacitor embedded in Through-Silicon Via (TSV)

• Main Authors: Lin, Ye, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; TSV; 3D Capacitors
• Online Access: https://hdl.handle.net/10356/144085
• Institution: Nanyang Technological University

In this paper, we investigated leakage current conduction mechanism in 3D capacitors embedded in TSVs. Two sets of test vehicles, 400 nm sputtered TiN/30 nm ALD Al2O3/400 nm sputtered TiN and 50 nm ALD TiN/10 nm ALD Al2O3/50 nm ALD TiN, have been characterized for their leakage current, respectivel...