Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate

• المؤلفون الرئيسيون: Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkwon, Guo, Xin, Zhang, Dao Hua, Gong, Xiao, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Semiconductors; Germanium-Tin; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/144386
• المؤسسة: Nanyang Technological University

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si s...