Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate

• Main Authors: Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkwon, Guo, Xin, Zhang, Dao Hua, Gong, Xiao, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; Germanium-Tin; Photodetector
• Online Access: https://hdl.handle.net/10356/144386
• Institution: Nanyang Technological University

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si s...