Growth and fabrication of carbon-based three-dimensional heterostructure in through-silicon vias (TSVs) for 3D interconnects
Carbon nanomaterials such as graphene and carbon nanotubes (CNTs) have recently received much attention as potential materials proposed for integration in the future semiconductor technologies because of the advantageous properties particularly in thermal and electrical conductivities. Among them, t...
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Main Authors: | , , , , , |
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格式: | Conference or Workshop Item |
語言: | English |
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2021
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在線閱讀: | https://hdl.handle.net/10356/151178 |
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