Effect of substrate bias on Ta-Ni diffusion barrier film for copper metallization
The effects of substrate bias on the properties of Ta-Ni film as a diffusion barrier for copper metallization were investigated. Ta-Ni films with Ta:Ni ratio 2.32-2.75 were deposited on the p-type silicon (100) wafers using magnetron co-sputtering with various substrate bias ranging from 0 - 100 wa...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/15630 |
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| Institution: | Nanyang Technological University |
| Language: | English |