Characterization of GaN-based semiconductor materials for device applications
This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze an...
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| Format: | Final Year Project |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://hdl.handle.net/10356/15953 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze and characterize the grown wafers. |
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