Characterization of GaN-based semiconductor materials for device applications

• Main Author: Ng, Yao Heng.
• Other Authors: K Radhakrishnan
• Format: Final Year Project
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/15953
• Institution: Nanyang Technological University

This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze an...