Characterization of GaN-based semiconductor materials for device applications

This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze an...

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Main Author:	Ng, Yao Heng.
Other Authors:	K Radhakrishnan
Format:	Final Year Project
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/15953
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-15953
record_format	dspace
spelling	sg-ntu-dr.10356-159532023-07-07T15:40:44Z Characterization of GaN-based semiconductor materials for device applications Ng, Yao Heng. K Radhakrishnan School of Electrical and Electronic Engineering Microelectronics Centre DRNTU::Engineering::Electrical and electronic engineering::Microelectronics This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze and characterize the grown wafers. Bachelor of Engineering 2009-05-19T07:20:24Z 2009-05-19T07:20:24Z 2009 2009 Final Year Project (FYP) http://hdl.handle.net/10356/15953 en Nanyang Technological University 80 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Ng, Yao Heng. Characterization of GaN-based semiconductor materials for device applications
description	This report investigated GaN based semiconductor materials for device applications. The objective of this investigation is to control the various growth parameters during the MBE growth to obtain smooth surface free of any defects, less Ga droplets, etc. AFM is used as the primary tool to analyze and characterize the grown wafers.
author2	K Radhakrishnan
author_facet	K Radhakrishnan Ng, Yao Heng.
format	Final Year Project
author	Ng, Yao Heng.
author_sort	Ng, Yao Heng.
title	Characterization of GaN-based semiconductor materials for device applications
title_short	Characterization of GaN-based semiconductor materials for device applications
title_full	Characterization of GaN-based semiconductor materials for device applications
title_fullStr	Characterization of GaN-based semiconductor materials for device applications
title_full_unstemmed	Characterization of GaN-based semiconductor materials for device applications
title_sort	characterization of gan-based semiconductor materials for device applications
publishDate	2009
url	http://hdl.handle.net/10356/15953
_version_	1772827961425133568

Characterization of GaN-based semiconductor materials for device applications

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