Chemical mechanical polishing of germanium selectively grown on silicon

This report reviews the importance of the Chemical and Mechanical Planarization (CMP) process for photonics applications and discusses the various factors that affect the quality of CMP, and how to achieve optimality of the slurry recipe. Germanium-on-silicon (GOS) waveguides are fabricated for t...

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Main Author: Tan, Bryan Yue Han
Other Authors: Tan Chuan Seng
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167639
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1676392023-07-07T17:43:13Z Chemical mechanical polishing of germanium selectively grown on silicon Tan, Bryan Yue Han Tan Chuan Seng School of Electrical and Electronic Engineering A*STAR Institute of Material Research and Engineering TanCS@ntu.edu.sg Engineering::Electrical and electronic engineering::Nanoelectronics Engineering::Materials::Microelectronics and semiconductor materials This report reviews the importance of the Chemical and Mechanical Planarization (CMP) process for photonics applications and discusses the various factors that affect the quality of CMP, and how to achieve optimality of the slurry recipe. Germanium-on-silicon (GOS) waveguides are fabricated for the purpose of chemical sensing by identifying unique chemical fingerprints that are present due to the different molecular vibrational modes, in the mid-infrared region. A novel fabrication method for waveguide was experimented, by using selective epitaxial germanium on silicon, an alternative to blanket germanium on silicon. The selective epitaxial GOS has the potential for reduced propagation loss compared to the more conventional blanket germanium on silicon, achieving a propagation loss of 11.53dB/cm before CMP, and is expected to improve after CMP by reducing thickness non-uniformity and improving material surface quality. Bachelor of Engineering (Electrical and Electronic Engineering) 2023-05-31T02:51:03Z 2023-05-31T02:51:03Z 2023 Final Year Project (FYP) Tan, B. Y. H. (2023). Chemical mechanical polishing of germanium selectively grown on silicon. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/167639 https://hdl.handle.net/10356/167639 en B2027-221 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle Engineering::Electrical and electronic engineering::Nanoelectronics
Engineering::Materials::Microelectronics and semiconductor materials
Tan, Bryan Yue Han
Chemical mechanical polishing of germanium selectively grown on silicon
description This report reviews the importance of the Chemical and Mechanical Planarization (CMP) process for photonics applications and discusses the various factors that affect the quality of CMP, and how to achieve optimality of the slurry recipe. Germanium-on-silicon (GOS) waveguides are fabricated for the purpose of chemical sensing by identifying unique chemical fingerprints that are present due to the different molecular vibrational modes, in the mid-infrared region. A novel fabrication method for waveguide was experimented, by using selective epitaxial germanium on silicon, an alternative to blanket germanium on silicon. The selective epitaxial GOS has the potential for reduced propagation loss compared to the more conventional blanket germanium on silicon, achieving a propagation loss of 11.53dB/cm before CMP, and is expected to improve after CMP by reducing thickness non-uniformity and improving material surface quality.
author2 Tan Chuan Seng
author_facet Tan Chuan Seng
Tan, Bryan Yue Han
format Final Year Project
author Tan, Bryan Yue Han
author_sort Tan, Bryan Yue Han
title Chemical mechanical polishing of germanium selectively grown on silicon
title_short Chemical mechanical polishing of germanium selectively grown on silicon
title_full Chemical mechanical polishing of germanium selectively grown on silicon
title_fullStr Chemical mechanical polishing of germanium selectively grown on silicon
title_full_unstemmed Chemical mechanical polishing of germanium selectively grown on silicon
title_sort chemical mechanical polishing of germanium selectively grown on silicon
publisher Nanyang Technological University
publishDate 2023
url https://hdl.handle.net/10356/167639
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