Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
The role of pre-existing oxide in the initial degradation mechanism of AlGaN/GaN high electron mobility transistors during ON-state stressing was systematically studied. The pre-existing oxide was revealed to exist as an amorphous oxide layer consisting primarily of Ni and Ga oxides with a small amo...
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sg-ntu-dr.10356-1730862024-01-12T15:47:25Z Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress Tan, H. T. Gao, Y. Syaranamual, G. J. Sasangka, W. A. Foo, Siew Chuen Lee, K. H. Arulkumaran, Subramaniam Ng, Geok Ing Thompson, C. V. Gan, Chee Lip School of Materials Science and Engineering School of Electrical and Electronic Engineering Singapore-MIT Alliance for Research and Technology Temasek Laboratories @ NTU Engineering::Materials Oxide AlGaN/GaN High Electron Mobility Transistors The role of pre-existing oxide in the initial degradation mechanism of AlGaN/GaN high electron mobility transistors during ON-state stressing was systematically studied. The pre-existing oxide was revealed to exist as an amorphous oxide layer consisting primarily of Ni and Ga oxides with a small amount of Al oxide at the GaN-cap/Ni-gate interface. Through an ON-state stressing experiment carried out in vacuum that excluded the influence of atmospheric oxygen, we discovered that the pre-existing interfacial oxide participated in an electrochemical reaction, accounting for the initial degradation in AlGaN/GaN HEMTs. The thickening of the oxide layer at the gate edge reduces the effective gate length of the device, thereby causing a decrease in the drain saturation current. Agency for Science, Technology and Research (A*STAR) Submitted/Accepted version This research/project is supported by A*STAR under the RIE2025 Manufacturing, Trade, and Connectivity Programmatic Fund (Award M21K6b0134). 2024-01-11T05:07:44Z 2024-01-11T05:07:44Z 2023 Journal Article Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, S. C., Lee, K. H., Arulkumaran, S., Ng, G. I., Thompson, C. V. & Gan, C. L. (2023). Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress. Microelectronics Reliability, 150, 115165-. https://dx.doi.org/10.1016/j.microrel.2023.115165 0026-2714 https://hdl.handle.net/10356/173086 10.1016/j.microrel.2023.115165 2-s2.0-85174590006 150 115165 en M21K6b0134 Microelectronics Reliability © 2023 Elsevier Ltd. All rights reserved. This article may be downloaded for personal use only. Any other use requires prior permission of the copyright holder. The Version of Record is available online at http://doi.org/10.1016/j.microrel.2023.115165. application/pdf |
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Engineering::Materials Oxide AlGaN/GaN High Electron Mobility Transistors Tan, H. T. Gao, Y. Syaranamual, G. J. Sasangka, W. A. Foo, Siew Chuen Lee, K. H. Arulkumaran, Subramaniam Ng, Geok Ing Thompson, C. V. Gan, Chee Lip Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
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The role of pre-existing oxide in the initial degradation mechanism of AlGaN/GaN high electron mobility transistors during ON-state stressing was systematically studied. The pre-existing oxide was revealed to exist as an amorphous oxide layer consisting primarily of Ni and Ga oxides with a small amount of Al oxide at the GaN-cap/Ni-gate interface. Through an ON-state stressing experiment carried out in vacuum that excluded the influence of atmospheric oxygen, we discovered that the pre-existing interfacial oxide participated in an electrochemical reaction, accounting for the initial degradation in AlGaN/GaN HEMTs. The thickening of the oxide layer at the gate edge reduces the effective gate length of the device, thereby causing a decrease in the drain saturation current. |
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School of Materials Science and Engineering |
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School of Materials Science and Engineering Tan, H. T. Gao, Y. Syaranamual, G. J. Sasangka, W. A. Foo, Siew Chuen Lee, K. H. Arulkumaran, Subramaniam Ng, Geok Ing Thompson, C. V. Gan, Chee Lip |
format |
Article |
author |
Tan, H. T. Gao, Y. Syaranamual, G. J. Sasangka, W. A. Foo, Siew Chuen Lee, K. H. Arulkumaran, Subramaniam Ng, Geok Ing Thompson, C. V. Gan, Chee Lip |
author_sort |
Tan, H. T. |
title |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
title_short |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
title_full |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
title_fullStr |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
title_full_unstemmed |
Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress |
title_sort |
investigation of the role of pre-existing oxide in the initial degradation mechanism in algan/gan hemts under on-state stress |
publishDate |
2024 |
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https://hdl.handle.net/10356/173086 |
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1789483126397861888 |