Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress

• Main Authors: Tan, H. T., Gao, Y., Syaranamual, G. J., Sasangka, W. A., Foo, Siew Chuen, Lee, K. H., Arulkumaran, Subramaniam, Ng, Geok Ing, Thompson, C. V., Gan, Chee Lip
• 其他作者: School of Materials Science and Engineering
• 格式: Article
• 語言: English
• 出版: 2024
• 主題: Engineering::Materials; Oxide; AlGaN/GaN High Electron Mobility Transistors
• 在線閱讀: https://hdl.handle.net/10356/173086

The role of pre-existing oxide in the initial degradation mechanism of AlGaN/GaN high electron mobility transistors during ON-state stressing was systematically studied. The pre-existing oxide was revealed to exist as an amorphous oxide layer consisting primarily of Ni and Ga oxides with a small amo...