Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...
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sg-ntu-dr.10356-1771822024-05-31T15:43:46Z Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) Ong, Eugene Wei Han Ng Geok Ing School of Electrical and Electronic Engineering EGING@ntu.edu.sg Engineering HEMT GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) and their pivotal role in advancing Electric Vehicle (EV) technology. The primary objective is to elucidate the manifold benefits of employing GaNbased HEMTs in EVs, highlighting their transformative impact on efficiency, performance, and sustainability. This is followed by an understanding behind the driving forces of this material, pre and post production, as well as an idea to a real life problem we see today. Through a systematic review and analysis, this study showcases significant strides made in GaN production, underlining its scalability and commercial viability. Moreover, it explores the integration of GaN-based HEMTs into EV inverters, explaining how these components enhance power conversion efficiency and contribute to the overall advancement of electric propulsion systems. Findings reveal a notable surge in GaN production capacity, coupled with widespread adoption in EV applications, particularly in the development of efficient inverters. The study underscores the pivotal role of GaN-based HEMTs in addressing the evolving demands of the automotive industry, where electrification and sustainability are paramount. This study aims to integrate the thermal and electrical properties of GaN into a solution to increase the efficiency in Electric Vehicles in the general process of Transportation Electrification with Singapore’s environmental plan highlighted by the Singapore Green Plan. The solution in this paper targets an effective region of improvement, exploiting a market gap in the development of Electric Vehicles that will yield better results while retaining the aesthetic and functional capability in Electric Vehicles. This thereby provides a multifaceted perspective beginning together financial objectives, government efforts, as well as environmental goals through a potential idea. Bachelor's degree 2024-05-27T04:32:25Z 2024-05-27T04:32:25Z 2024 Final Year Project (FYP) Ong, E. W. H. (2024). Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS). Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/177182 https://hdl.handle.net/10356/177182 en A2157-231 application/pdf Nanyang Technological University |
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Engineering HEMT Ong, Eugene Wei Han Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
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GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) and their pivotal role in advancing Electric Vehicle (EV) technology. The primary objective is to elucidate the manifold benefits of employing GaNbased HEMTs in EVs, highlighting their transformative impact on efficiency, performance, and sustainability. This is followed by an understanding behind the driving forces of this material, pre and post production, as well as an idea to a real life problem we see today. Through a systematic review and analysis, this study showcases significant strides made in GaN production, underlining its scalability and commercial viability. Moreover, it explores the integration of GaN-based HEMTs into EV inverters, explaining how these components enhance power conversion efficiency and contribute to the overall advancement of electric propulsion systems. Findings reveal a notable surge in GaN production capacity, coupled with widespread adoption in EV applications, particularly in the development of efficient inverters. The study underscores the pivotal role of GaN-based HEMTs in addressing the evolving demands of the automotive industry, where electrification and sustainability are paramount. This study aims to integrate the thermal and electrical properties of GaN into a solution to increase the efficiency in Electric Vehicles in the general process of Transportation Electrification with Singapore’s environmental plan highlighted by the Singapore Green Plan. The solution in this paper targets an effective region of improvement, exploiting a market gap in the development of Electric Vehicles that will yield better results while retaining the aesthetic and functional capability in Electric Vehicles. This thereby provides a multifaceted perspective beginning together financial objectives, government efforts, as well as environmental goals through a potential idea. |
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Ng Geok Ing |
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Ng Geok Ing Ong, Eugene Wei Han |
format |
Final Year Project |
author |
Ong, Eugene Wei Han |
author_sort |
Ong, Eugene Wei Han |
title |
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
title_short |
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
title_full |
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
title_fullStr |
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
title_full_unstemmed |
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) |
title_sort |
studies of gallium nitride (gan) based high electron mobility transistor (hemts) |
publisher |
Nanyang Technological University |
publishDate |
2024 |
url |
https://hdl.handle.net/10356/177182 |
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1814047195751514112 |