Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...

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Main Author: Ong, Eugene Wei Han
Other Authors: Ng Geok Ing
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2024
Subjects:
Online Access:https://hdl.handle.net/10356/177182
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1771822024-05-31T15:43:46Z Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS) Ong, Eugene Wei Han Ng Geok Ing School of Electrical and Electronic Engineering EGING@ntu.edu.sg Engineering HEMT GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) and their pivotal role in advancing Electric Vehicle (EV) technology. The primary objective is to elucidate the manifold benefits of employing GaNbased HEMTs in EVs, highlighting their transformative impact on efficiency, performance, and sustainability. This is followed by an understanding behind the driving forces of this material, pre and post production, as well as an idea to a real life problem we see today. Through a systematic review and analysis, this study showcases significant strides made in GaN production, underlining its scalability and commercial viability. Moreover, it explores the integration of GaN-based HEMTs into EV inverters, explaining how these components enhance power conversion efficiency and contribute to the overall advancement of electric propulsion systems. Findings reveal a notable surge in GaN production capacity, coupled with widespread adoption in EV applications, particularly in the development of efficient inverters. The study underscores the pivotal role of GaN-based HEMTs in addressing the evolving demands of the automotive industry, where electrification and sustainability are paramount. This study aims to integrate the thermal and electrical properties of GaN into a solution to increase the efficiency in Electric Vehicles in the general process of Transportation Electrification with Singapore’s environmental plan highlighted by the Singapore Green Plan. The solution in this paper targets an effective region of improvement, exploiting a market gap in the development of Electric Vehicles that will yield better results while retaining the aesthetic and functional capability in Electric Vehicles. This thereby provides a multifaceted perspective beginning together financial objectives, government efforts, as well as environmental goals through a potential idea. Bachelor's degree 2024-05-27T04:32:25Z 2024-05-27T04:32:25Z 2024 Final Year Project (FYP) Ong, E. W. H. (2024). Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS). Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/177182 https://hdl.handle.net/10356/177182 en A2157-231 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering
HEMT
spellingShingle Engineering
HEMT
Ong, Eugene Wei Han
Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
description GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMTs) and their pivotal role in advancing Electric Vehicle (EV) technology. The primary objective is to elucidate the manifold benefits of employing GaNbased HEMTs in EVs, highlighting their transformative impact on efficiency, performance, and sustainability. This is followed by an understanding behind the driving forces of this material, pre and post production, as well as an idea to a real life problem we see today. Through a systematic review and analysis, this study showcases significant strides made in GaN production, underlining its scalability and commercial viability. Moreover, it explores the integration of GaN-based HEMTs into EV inverters, explaining how these components enhance power conversion efficiency and contribute to the overall advancement of electric propulsion systems. Findings reveal a notable surge in GaN production capacity, coupled with widespread adoption in EV applications, particularly in the development of efficient inverters. The study underscores the pivotal role of GaN-based HEMTs in addressing the evolving demands of the automotive industry, where electrification and sustainability are paramount. This study aims to integrate the thermal and electrical properties of GaN into a solution to increase the efficiency in Electric Vehicles in the general process of Transportation Electrification with Singapore’s environmental plan highlighted by the Singapore Green Plan. The solution in this paper targets an effective region of improvement, exploiting a market gap in the development of Electric Vehicles that will yield better results while retaining the aesthetic and functional capability in Electric Vehicles. This thereby provides a multifaceted perspective beginning together financial objectives, government efforts, as well as environmental goals through a potential idea.
author2 Ng Geok Ing
author_facet Ng Geok Ing
Ong, Eugene Wei Han
format Final Year Project
author Ong, Eugene Wei Han
author_sort Ong, Eugene Wei Han
title Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
title_short Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
title_full Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
title_fullStr Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
title_full_unstemmed Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)
title_sort studies of gallium nitride (gan) based high electron mobility transistor (hemts)
publisher Nanyang Technological University
publishDate 2024
url https://hdl.handle.net/10356/177182
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