Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

• Main Author: Ong, Eugene Wei Han
• Other Authors: Ng Geok Ing
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2024
• Subjects: Engineering; HEMT
• Online Access: https://hdl.handle.net/10356/177182
• Institution: Nanyang Technological University

GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...