Studies of gallium nitride (GaN) based high electron mobility transistor (HEMTS)

• المؤلف الرئيسي: Ong, Eugene Wei Han
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2024
• الموضوعات: Engineering; HEMT
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/177182

GaN (Gallium Nitride) on High Electron Mobility Transistors (HEMTs) has been developed since the early 2000s, however, it is not till recent times that it is commercialised and used for an impressive array of technologically advanced advents. This project delves into the burgeoning field of Gallium...