Characterization and modelling of silicon nanowire based diode
Silicon nanowires (SiNWs) research has intensified over the past decade with the advancement in nanowires fabrication technology. The objective of this study is to characterize SiNWs diodes under dark and illuminated conditions to gain an understanding of the nanoscale junction devices. Two type...
Saved in:
Main Author: | Chia, Hua Chew. |
---|---|
Other Authors: | Rusli |
Format: | Final Year Project |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/18191 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Gate-all-around silicon nanowire FET modeling
by: Chen, Xiangchen
Published: (2014) -
Compact modeling of gate-all-around silicon nanowire MOSFETs
by: Lin Shihuan
Published: (2012) -
Large scale low cost fabrication of diameter controllable silicon nanowire arrays
by: Sun, Leimeng, et al.
Published: (2014) -
Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs
by: Tan, Eu Jin
Published: (2010) -
High efficiency silicon nanowire/organic hybrid solar cells with two-step surface treatment
by: Wang, Hao, et al.
Published: (2015)