Thin dielectric films with low dielectric constants for quarter micron devices
The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vap...
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| Format: | Theses and Dissertations |
| Language: | English |
| Published: |
2009
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| Online Access: | http://hdl.handle.net/10356/19336 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vapour deposition (CVD) techniques. Characterisation of low k films is important to IC manufacturing as it also enhances the development of new low k materials that are more promising than conventional SiO2. |
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