Thin dielectric films with low dielectric constants for quarter micron devices
The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vap...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2009
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Online Access: | http://hdl.handle.net/10356/19336 |
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Institution: | Nanyang Technological University |
Language: | English |
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