Thin dielectric films with low dielectric constants for quarter micron devices
The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vap...
Saved in:
Main Author: | Chua, Chee Tee. |
---|---|
Other Authors: | School of Applied Science |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2009
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/19336 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
by: Siew, Yong Kong.
Published: (2008) -
Development of high dielectric constant SrTiO3 thin films
by: Loo, Martin Chih Chien.
Published: (2008) -
Study and characterization of low dielectric constant materials for interlayer dielectric applications
by: Narayanan, Babu
Published: (2008) -
Surface processing of nanoporous low dielectric constant thin films
by: LIU JUN
Published: (2010) -
Low dielectric constant materials for multilevel interconnect applications
by: Wong, Terence Kin Shun.
Published: (2008)