Thin dielectric films with low dielectric constants for quarter micron devices

The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vap...

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Main Author:	Chua, Chee Tee.
Other Authors:	School of Applied Science
Format:	Theses and Dissertations
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Materials
Online Access:	http://hdl.handle.net/10356/19336
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-19336
record_format	dspace
spelling	sg-ntu-dr.10356-193362020-09-27T20:16:01Z Thin dielectric films with low dielectric constants for quarter micron devices Chua, Chee Tee. School of Applied Science Gautam Sarkar DRNTU::Engineering::Materials The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vapour deposition (CVD) techniques. Characterisation of low k films is important to IC manufacturing as it also enhances the development of new low k materials that are more promising than conventional SiO2. Master of Applied Science 2009-12-08T08:46:01Z 2009-12-08T08:46:01Z 1999 1999 Thesis http://hdl.handle.net/10356/19336 en 108 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials
spellingShingle	DRNTU::Engineering::Materials Chua, Chee Tee. Thin dielectric films with low dielectric constants for quarter micron devices
description	The use of low dielectric constant (k) materials results in higher speed devices in ULSI (ultra-large scale integration) technology, thereby making low k dielectrics an important area of research. There is a wide variety of low k materials which can be deposited using spin-on as well as chemical vapour deposition (CVD) techniques. Characterisation of low k films is important to IC manufacturing as it also enhances the development of new low k materials that are more promising than conventional SiO2.
author2	School of Applied Science
author_facet	School of Applied Science Chua, Chee Tee.
format	Theses and Dissertations
author	Chua, Chee Tee.
author_sort	Chua, Chee Tee.
title	Thin dielectric films with low dielectric constants for quarter micron devices
title_short	Thin dielectric films with low dielectric constants for quarter micron devices
title_full	Thin dielectric films with low dielectric constants for quarter micron devices
title_fullStr	Thin dielectric films with low dielectric constants for quarter micron devices
title_full_unstemmed	Thin dielectric films with low dielectric constants for quarter micron devices
title_sort	thin dielectric films with low dielectric constants for quarter micron devices
publishDate	2009
url	http://hdl.handle.net/10356/19336
_version_	1681057574347079680

Thin dielectric films with low dielectric constants for quarter micron devices

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