Design and fabrication of heterojunction bipolar transistors (HBT)

Design and fabrication of heterojunction bipolar transistors (HBT)

This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composi...

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Bibliographic Details
Main Author: Pan, Yang
Other Authors: Ng, Geok Ing
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:http://hdl.handle.net/10356/3113
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Institution: Nanyang Technological University
Description
Summary:This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composition graded AlGaAs emitter layer, a GaAs uniform base layer, a GaAs collector and a sub-collector layer. The base ohmic contact pattern is defined by both self-aligned and re-aligned approach for comparison purpose.

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