Design and fabrication of heterojunction bipolar transistors (HBT)

• Main Author: Pan, Yang
• Other Authors: Ng, Geok Ing
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
• Online Access: http://hdl.handle.net/10356/3113
• Institution: Nanyang Technological University

This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composi...