Design and fabrication of heterojunction bipolar transistors (HBT)

This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composi...

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Main Author:	Pan, Yang
Other Authors:	Ng, Geok Ing
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Online Access:	http://hdl.handle.net/10356/3113
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Institution:	Nanyang Technological University

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spelling	sg-ntu-dr.10356-31132023-07-04T15:19:53Z Design and fabrication of heterojunction bipolar transistors (HBT) Pan, Yang Ng, Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composition graded AlGaAs emitter layer, a GaAs uniform base layer, a GaAs collector and a sub-collector layer. The base ohmic contact pattern is defined by both self-aligned and re-aligned approach for comparison purpose. Master of Engineering 2008-09-17T09:22:32Z 2008-09-17T09:22:32Z 2000 2000 Thesis http://hdl.handle.net/10356/3113 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials Pan, Yang Design and fabrication of heterojunction bipolar transistors (HBT)
description	This thesis presents the development of an AlGaAs/GaAs-based heterojunction bipolar transistor technology for microwave and power applications. The HBTs were fabricated on MOCVD grown epitaxial layers which consist of an InyGai.yAs emitter contact layer, a GaAs emitter cap layer, an aluminum composition graded AlGaAs emitter layer, a GaAs uniform base layer, a GaAs collector and a sub-collector layer. The base ohmic contact pattern is defined by both self-aligned and re-aligned approach for comparison purpose.
author2	Ng, Geok Ing
author_facet	Ng, Geok Ing Pan, Yang
format	Theses and Dissertations
author	Pan, Yang
author_sort	Pan, Yang
title	Design and fabrication of heterojunction bipolar transistors (HBT)
title_short	Design and fabrication of heterojunction bipolar transistors (HBT)
title_full	Design and fabrication of heterojunction bipolar transistors (HBT)
title_fullStr	Design and fabrication of heterojunction bipolar transistors (HBT)
title_full_unstemmed	Design and fabrication of heterojunction bipolar transistors (HBT)
title_sort	design and fabrication of heterojunction bipolar transistors (hbt)
publishDate	2008
url	http://hdl.handle.net/10356/3113
_version_	1772827057160454144

Design and fabrication of heterojunction bipolar transistors (HBT)

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