Studies of wafer level electromigration test for ULSI

Microelectronic test structures are used for wide variety of tasks which include equipment characterizations, reliability evaluations, defect monitoring, transistor parameter extraction and process verification and development. Similarly, test structures are used in electromigration evaluation. In t...

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Main Author:	Sum, Heng Keong.
Other Authors:	Tan, Cher Ming
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/3299
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3299
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spelling	sg-ntu-dr.10356-32992023-07-04T15:21:51Z Studies of wafer level electromigration test for ULSI Sum, Heng Keong. Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Microelectronic test structures are used for wide variety of tasks which include equipment characterizations, reliability evaluations, defect monitoring, transistor parameter extraction and process verification and development. Similarly, test structures are used in electromigration evaluation. In this dissertation, the various common test structures used in electromigration test were reviewed. The structures’ application, advantages and disadvantages were discussed. Master of Science (Microelectronics) 2008-09-17T09:26:50Z 2008-09-17T09:26:50Z 2003 2003 Thesis http://hdl.handle.net/10356/3299 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Sum, Heng Keong. Studies of wafer level electromigration test for ULSI
description	Microelectronic test structures are used for wide variety of tasks which include equipment characterizations, reliability evaluations, defect monitoring, transistor parameter extraction and process verification and development. Similarly, test structures are used in electromigration evaluation. In this dissertation, the various common test structures used in electromigration test were reviewed. The structures’ application, advantages and disadvantages were discussed.
author2	Tan, Cher Ming
author_facet	Tan, Cher Ming Sum, Heng Keong.
format	Theses and Dissertations
author	Sum, Heng Keong.
author_sort	Sum, Heng Keong.
title	Studies of wafer level electromigration test for ULSI
title_short	Studies of wafer level electromigration test for ULSI
title_full	Studies of wafer level electromigration test for ULSI
title_fullStr	Studies of wafer level electromigration test for ULSI
title_full_unstemmed	Studies of wafer level electromigration test for ULSI
title_sort	studies of wafer level electromigration test for ulsi
publishDate	2008
url	http://hdl.handle.net/10356/3299
_version_	1772828613014454272

Studies of wafer level electromigration test for ULSI

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