Physical analysis on ultrathin gate dielectric breakdown using TEM

Physical analysis on ultrathin gate dielectric breakdown using TEM

In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate die...

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Bibliographic Details
Main Author: Tang, Lei Jun
Other Authors: Tung Chih Hang
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/3348
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Institution: Nanyang Technological University
Description
Summary:In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate dielectric technology has been widely used in the current technology node.

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