Physical analysis on ultrathin gate dielectric breakdown using TEM
In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate die...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | https://hdl.handle.net/10356/3348 |
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| Institution: | Nanyang Technological University |