Physical analysis on ultrathin gate dielectric breakdown using TEM

Physical analysis on ultrathin gate dielectric breakdown using TEM

In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate die...

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Main Author: Tang, Lei Jun
Other Authors: Tung Chih Hang
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Online Access:https://hdl.handle.net/10356/3348
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-33482023-07-04T16:39:10Z Physical analysis on ultrathin gate dielectric breakdown using TEM Tang, Lei Jun Tung Chih Hang Pey Kin Leong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate dielectric technology has been widely used in the current technology node. MASTER OF ENGINEERING (EEE) 2008-09-17T09:27:59Z 2008-09-17T09:27:59Z 2005 2005 Thesis Tang, L. J. (2005). Physical analysis on ultrathin gate dielectric breakdown using TEM. Master’s thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3348 10.32657/10356/3348 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Tang, Lei Jun
Physical analysis on ultrathin gate dielectric breakdown using TEM
description In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate dielectric technology has been widely used in the current technology node.
author2 Tung Chih Hang
author_facet Tung Chih Hang
Tang, Lei Jun
format Theses and Dissertations
author Tang, Lei Jun
author_sort Tang, Lei Jun
title Physical analysis on ultrathin gate dielectric breakdown using TEM
title_short Physical analysis on ultrathin gate dielectric breakdown using TEM
title_full Physical analysis on ultrathin gate dielectric breakdown using TEM
title_fullStr Physical analysis on ultrathin gate dielectric breakdown using TEM
title_full_unstemmed Physical analysis on ultrathin gate dielectric breakdown using TEM
title_sort physical analysis on ultrathin gate dielectric breakdown using tem
publishDate 2008
url https://hdl.handle.net/10356/3348
_version_ 1772825730549284864

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