Physical analysis on ultrathin gate dielectric breakdown using TEM

• Main Author: Tang, Lei Jun
• Other Authors: Tung Chih Hang
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
• Online Access: https://hdl.handle.net/10356/3348
• Institution: Nanyang Technological University

In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate die...