Modeling of electromigration failure under pulsed current conditions in confined copper interconnect

The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated resu...

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Main Author: Lin, Jingyuan.
Other Authors: Gan Chee Lip
Format: Final Year Project
Language:English
Published: 2010
Subjects:
Online Access:http://hdl.handle.net/10356/38593
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-385932023-03-04T15:33:16Z Modeling of electromigration failure under pulsed current conditions in confined copper interconnect Lin, Jingyuan. Gan Chee Lip School of Materials Science and Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated results, for void nucleation, the duty cycle exponent, m, and the current density exponent, n, were evaluated to be 1.99 and 1.98, respectively. For void growth to failure, the m and n values were estimated to be 0.97 and 0.95. Both the m and n values evaluated for void nucleation and void growth follows the average current density model, which is a modified Black’s equation. Bachelor of Engineering (Materials Engineering) 2010-05-12T08:28:23Z 2010-05-12T08:28:23Z 2010 2010 Final Year Project (FYP) http://hdl.handle.net/10356/38593 en Nanyang Technological University 46 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Lin, Jingyuan.
Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
description The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated results, for void nucleation, the duty cycle exponent, m, and the current density exponent, n, were evaluated to be 1.99 and 1.98, respectively. For void growth to failure, the m and n values were estimated to be 0.97 and 0.95. Both the m and n values evaluated for void nucleation and void growth follows the average current density model, which is a modified Black’s equation.
author2 Gan Chee Lip
author_facet Gan Chee Lip
Lin, Jingyuan.
format Final Year Project
author Lin, Jingyuan.
author_sort Lin, Jingyuan.
title Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
title_short Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
title_full Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
title_fullStr Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
title_full_unstemmed Modeling of electromigration failure under pulsed current conditions in confined copper interconnect
title_sort modeling of electromigration failure under pulsed current conditions in confined copper interconnect
publishDate 2010
url http://hdl.handle.net/10356/38593
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