Modeling of electromigration failure under pulsed current conditions in confined copper interconnect

• المؤلف الرئيسي: Lin, Jingyuan.
• مؤلفون آخرون: Gan Chee Lip
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/38593
• المؤسسة: Nanyang Technological University

The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated resu...