Modeling of electromigration failure under pulsed current conditions in confined copper interconnect

• Main Author: Lin, Jingyuan.
• Other Authors: Gan Chee Lip
• Format: Final Year Project
• Language: English
• Published: 2010
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/38593
• Institution: Nanyang Technological University

The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated resu...