Modeling of electromigration failure under pulsed current conditions in confined copper interconnect

• 主要作者: Lin, Jingyuan.
• 其他作者: Gan Chee Lip
• 格式: Final Year Project
• 語言: English
• 出版: 2010
• 主題: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• 在線閱讀: http://hdl.handle.net/10356/38593
• 機構: Nanyang Technological University

The time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated resu...